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Process

Manufacturer Type Description  
Picture
STS ICP ASE Multiplex STS ICP High Rate (ASE) Advanced Silicon Etch system,He backside cooling,ESC chuck 150mm,ENI 300/30 Watt(13.56MHz) RF power supply,Advanced Energy 3kWatt matching network,Leybold Mag200CT,Huber 140W chiller,OnBoard gas panel- 4 MFCs (SF6,O2,Ar,C4H8), 150mm ESC chuck, Edwards iQMB250 / iQDP80(M), MAC Cassette to Cassette Loader can be an option "
Details
STSICPMOD
STS Multiplex RIE Standard RIE (Reactive Ion Etch) MESC Multiplex,Intellimetrics end-point detector,ENI ACG3G 300/30 watt(13.56 MHz) RF power supply & matching network,6" configuration, non-clamp system with DI water cooled chuck (+5 to -40 degrees C),load lock,wafer loader (MAC),remote gas box (O2,Ar,CF4, CHF3),Pfeiffer TH521 PC turbo, Betta-tech chiller
Details
STS_RIE
STS ASPECT Cluster Tool ICP ICP Cluster System, BOC process, Standard rate etch ICP Process module only New, installed but never turned on (1) Multiplex ICP process module Low pressure Plasma processing chamber Inductive coupled high frequency source 1kw (13.56 MHz) RF supply and matching network 300/30W (13.56 MHz) RF supply and matching network Phase lock unit for (2) 13.56 MHz P.S. U.S Temperature controlled (-40C to –45 C) substrate susceptor Electrostatic wafer chuck with backside cooling 10x gas lines - six used (Ar, Ne, O2, SF6, C4H8, ClO3) SOI process package Option
Details
STS_Multiplex_2

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